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APT100GT120JU2
ISOTOP(R) Boost chopper Trench + Field Stop IGBT(R) VCES = 1200V IC = 100A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * ISOTOP(R) Package (SOT-227) * Very low stray inductance * High level of integration Benefits * Low conduction losses * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
K
C
G
E
E G C
K
ISOTOP
Absolute maximum ratings
Symbol VCES IC1 IC2 ICM VGE PD IFA V IFRMS
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 25C TC = 80C TC = 25C TC = 25C TC = 80C
27 34
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT100GT120JU2 - Rev 1 June, 2006
Max ratings 1200 140 100 280 20 480
Unit V A V W
APT100GT120JU2
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) VGE(th) IGES Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE, IC = 4mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 Max 5 2.1 6.5 400 Unit mA V V nA
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Resistive Switching (25C) VGE = 15V VBus = 600V IC = 100A R G = 3.9 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A R G = 3.9
Min
Typ 7200 400 300 260 30 420 70 290 45 520 90 10 12
Max
Unit pF
ns
ns
mJ
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APT100GT120JU2 - Rev 1 June, 2006
APT100GT120JU2
Chopper diode ratings and characteristics
Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 800V di/dt =1000A/s IF = 30A VR = 800V di/dt =200A/s Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 1200V VR = 1200V VR = 200V IF=1A,VR=30V di/dt =100A/s Min Typ 2.0 2.3 1.8 32 Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C 31 370 500 5 12 660 3450 220 4650 37 ns Max 2.5 250 500 Unit V A pF
Tj = 125C Tj = 25C Tj = 125C
A nC ns nC A
Thermal and package characteristics
Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min IGBT Diode 2500 -55
Typ
Max 0.26 1.1 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
Typical IGBT Performance Curve
Fmax, Operating Frequency (kHz) Oper ating Fre que ncy vs Collector Curr ent 40 35 30 25 20
APT100GT120JU2 - Rev 1 June, 2006
V CE =600V D=50% RG=3.9 TJ =125C
15 10 5 0 0 20 40 60 80 100 120 140 IC (A)
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APT100GT120JU2
Output Characteristics (VGE=15V) 200 150 IC (A) T J=25C TJ=125C IC (A) Output Characteristics 200 TJ = 125C 150 VGE=17V V GE=13V VGE =15V 100 V GE=9V
100 50 0 0 1 2 V CE (V) Transfert Characteristics 3 4
50
0 0 1 2 VCE (A) 3 4
Energy losses vs Collector Current 25 V CE = 600V VGE = 15V RG = 3.9 TJ = 125C Eoff Eon
200
TJ=25C 150 IC (A) 20 TJ=125C E (mJ) 15 10 5 0 5 6 7 8 9 10 11 12 0
100
50
0 VGE (V) Switching Energy Losses vs Gate Resistance 25 20 E (mJ) 15 10 5 0 0 5 10 15 20 Gate Resistance (ohms) 25 VCE = 600V VGE =15V IC = 100A T J = 125C Eon
25
50
75
100 125 150 175 200 IC (A)
Reverse Safe Operating Area 240 200
IC (A)
Eoff
160 120 80 40 0 0 400 800 VCE (V) 1200 1600 VGE=15V TJ=125C RG=3.9
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
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APT100GT120JU2 - Rev 1 June, 2006
APT100GT120JU2
Typical Diode Performance Curve
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APT100GT120JU2 - Rev 1 June, 2006
APT100GT120JU2
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APT100GT120JU2 - Rev 1 June, 2006
APT100GT120JU2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Cathode
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Emitter
Dimensions in Millimeters and (Inches)
Gate
APT100GT120JU2 - Rev 1 June, 2006
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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